標題: Asymmetric Low Temperature Bonding Structure with Thin Solder Layers Using Ultra-Thin Buffer Layer
作者: Yu, Ting-Yang
Liang, Hag-Wen
Chang, Yao-Jen
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 3D Integration;3D Integrated Circuit (3D-IC);Asymmetric Bonding;Hybrid Bonding;Interconnect;Micro Bump
公開日期: 1-Aug-2018
摘要: Asymmetric Cu to In/Sn bonding structure with Ni ultrathin buffer layer (UBL) on Cu side is investigated in this research. The usage of Ni UBL slows down intermetallic compound (IMC) formation during bonding. Asymmetric structure can separate electrical isolation and solder process to avoid interaction, which can prevent IMC formation during polymer curing. A well-bonded asymmetric structure can be achieved with submicron solder by 150 degrees C bonding for 15 min. The structure shows the potential for low temperature hybrid bonding technology in high-density three-dimensional (3D) integration.
URI: http://dx.doi.org/10.1166/jnn.2018.15375
http://hdl.handle.net/11536/144594
ISSN: 1533-4880
DOI: 10.1166/jnn.2018.15375
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 18
起始頁: 5397
結束頁: 5403
Appears in Collections:Articles