標題: The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors
作者: Fu, Ruofan
Yang, Jianwen
Chang, Wei-Chiao
Chang, Wei-Cheng
Chang, Chien-Min
Lin, Dong
Zhang, Qun
Liu, Po-Tsun
Shieh, Han-Ping D.
光電工程學系
Department of Photonics
關鍵字: annealing;indium-zinc-tungsten-oxide;positive bias stress;thin-film transistors
公開日期: 21-三月-2018
摘要: In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2cm(2)V(-1)s(-1) at 300 degrees C, along with an on/off current ratio of 1.6x10(8). Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4V after being stressed for 1500s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.
URI: http://dx.doi.org/10.1002/pssa.201700785
http://hdl.handle.net/11536/144729
ISSN: 1862-6300
DOI: 10.1002/pssa.201700785
期刊: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume: 215
顯示於類別:期刊論文