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dc.contributor.authorZhang, Haichangen_US
dc.contributor.authorLiu, Keweien_US
dc.contributor.authorWu, Kuan-Yien_US
dc.contributor.authorChen, Yu-Mingen_US
dc.contributor.authorDeng, Ruonanen_US
dc.contributor.authorLi, Xiangen_US
dc.contributor.authorJin, Hailiangen_US
dc.contributor.authorLi, Sien_US
dc.contributor.authorChuang, Steven S. C.en_US
dc.contributor.authorWang, Chien-Lungen_US
dc.contributor.authorZhu, Yuen_US
dc.date.accessioned2018-08-21T05:53:28Z-
dc.date.available2018-08-21T05:53:28Z-
dc.date.issued2018-03-22en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.jpcc.7b11992en_US
dc.identifier.urihttp://hdl.handle.net/11536/144734-
dc.description.abstractNovel pigments isoepindolidiones (isoEpi) and di-tert-butyl quinolino[8,7-h]quinoline-1,7-diyl bis(carbonate) (isoEpi-Boc) were synthesized and characterized. The spectroscopic characterizations indicated that the tert-butyloxycarbonyl (t-Boc) units could be removed from soluble isoEpi-Boc by thermal annealing, forming insoluble isoEpi with hydrogen bonding. A solid-state isoEpi-Boc crystal to isoEpi crystal transition was observed during the annealing process and the molecular packing was significantly changed. With the emergence of hydrogen bonds, the isoEpi molecules were arranged into a brick-in-wall structure with pi-stacking along the crystal growth axis, leading to a significant enhancement of charge mobility along the crystal growth direction (the hole mobility from 3.4 x 10(-4) to 0.32 cm(2)/(V.s), and the electron mobility from nondetectable to 5.6 x 10(-3) cm(2)/(V.s)). The results indicate that isoEpi is a promising chromophore for organic field-effect transistor (OFET). The crystal-to-crystal transition driven by the formation of hydrogen bonds is a unique method for modulating the charge transport properties in organic semiconductive materials for OFET devices.en_US
dc.language.isoen_USen_US
dc.titleHydrogen-Bonding-Mediated Solid-State Self-Assembled Isoepindolidiones (isoEpi) Crystal for Organic Field-Effect Transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.jpcc.7b11992en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume122en_US
dc.citation.spage5888en_US
dc.citation.epage5895en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000428356700007en_US
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