標題: | Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs |
作者: | Hsieh, Dong-Ru Chan, Yi-De Kuo, Po-Yi Chao, Tien-Sheng 電子物理學系 光電工程學系 Department of Electrophysics Department of Photonics |
關鍵字: | 3-D integrated circuits (ICs);channel doping concentration;reverse boron penetration;Pi-gate (PG);poly-Si;junctionless accumulation mode (JAM) |
公開日期: | 1-一月-2018 |
摘要: | In this paper, the influence of channel doping concentration and reverse boron penetration on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) FETs has been experimentally investigated and discussed. Effective carrier concentration (N-eff) and threshold voltage (V-TH) are found to be sensitive to doping concentration. Moreover, the positive shift in V-TH and the degradation in the subthreshold behavior for PG JAM FETs are observed after an additional source/drain (S/D) activation process. Using a low thermal-budget S/D activation process, PG JAM FETs with a suitable channel doping concentration can show excellent electrical characteristics: 1) steep subthreshold swing of 86 mV/dec.; 2) low average subthreshold swing (A.S.S.) of 96 mV/dec.; and 3) high ON/OFF current ratio (I-ON/I-OFF) of 7.7 x 10(7) (I-ON at V-G - V-TH = -2 V and V-D = -1 V). |
URI: | http://dx.doi.org/10.1109/JEDS.2018.2803800 http://hdl.handle.net/11536/144752 |
ISSN: | 2168-6734 |
DOI: | 10.1109/JEDS.2018.2803800 |
期刊: | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY |
Volume: | 6 |
起始頁: | 314 |
結束頁: | 319 |
顯示於類別: | 期刊論文 |