Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

Abstract

In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures (TN) from 700 degrees C to 800 degrees C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION), and enhancement of TEOS gate oxide breakdown E-field (E-OBD). PG JAM TFTs by means of a proper channel doping concentration (N-ch = 5 x 10(18) cm(-3)) and a suitable TN (800 degrees C) exhibit a steep A.S.S. similar to 96 mV/dec. and a large E-OBD similar to 12.1 MV/cm.