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dc.contributor.authorHsieh, Dong-Ruen_US
dc.contributor.authorLin, Kun-Chengen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2019-04-02T05:58:41Z-
dc.date.available2019-04-02T05:58:41Z-
dc.date.issued2019-01-01en_US
dc.identifier.issn2168-6734en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2019.2896599en_US
dc.identifier.urihttp://hdl.handle.net/11536/148990-
dc.description.abstractIn this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures (TN) from 700 degrees C to 800 degrees C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION), and enhancement of TEOS gate oxide breakdown E-field (E-OBD). PG JAM TFTs by means of a proper channel doping concentration (N-ch = 5 x 10(18) cm(-3)) and a suitable TN (800 degrees C) exhibit a steep A.S.S. similar to 96 mV/dec. and a large E-OBD similar to 12.1 MV/cm.en_US
dc.language.isoen_USen_US
dc.subject3-D integrated circuits (ICs)en_US
dc.subjectreverse boron penetrationen_US
dc.subjectnitrous oxide (N2O)en_US
dc.subjectPi-gate (PG)en_US
dc.subjectpoly-Sien_US
dc.subjectjunctionless accumulation mode (JAM)en_US
dc.titleInvestigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JEDS.2019.2896599en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.citation.volume7en_US
dc.citation.spage282en_US
dc.citation.epage286en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000460753000040en_US
dc.citation.woscount0en_US
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