標題: Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs
作者: Hsieh, Dong-Ru
Lin, Kun-Cheng
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: 3-D integrated circuits (ICs);reverse boron penetration;nitrous oxide (N2O);Pi-gate (PG);poly-Si;junctionless accumulation mode (JAM)
公開日期: 1-Jan-2019
摘要: In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures (TN) from 700 degrees C to 800 degrees C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION), and enhancement of TEOS gate oxide breakdown E-field (E-OBD). PG JAM TFTs by means of a proper channel doping concentration (N-ch = 5 x 10(18) cm(-3)) and a suitable TN (800 degrees C) exhibit a steep A.S.S. similar to 96 mV/dec. and a large E-OBD similar to 12.1 MV/cm.
URI: http://dx.doi.org/10.1109/JEDS.2019.2896599
http://hdl.handle.net/11536/148990
ISSN: 2168-6734
DOI: 10.1109/JEDS.2019.2896599
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 7
起始頁: 282
結束頁: 286
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