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dc.contributor.authorTang, CSen_US
dc.contributor.authorChu, CSen_US
dc.date.accessioned2019-04-03T06:39:00Z-
dc.date.available2019-04-03T06:39:00Z-
dc.date.issued1996-02-15en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.53.4838en_US
dc.identifier.urihttp://hdl.handle.net/11536/1447-
dc.description.abstractQuantum transport in a narrow constriction and in the presence of a finite-range time-modulated potential is studied. The potential takes the form V(x,t) = V-0 theta(x)theta(a-x)cos(omega t), with a the range of the potential and x the transmission direction. Intrasubband transitions for the electrons and for arbitrary omega are made possible by the finiteness in the potential range. Our results show that, as the chemical potential mu increases, the dc conductance G exhibits dip structures when mu is at nn omega above the threshold energy of a subband. These structures in G are found in both the small a (a similar to lambda) and the large a (a much greater than lambda) regime. These dips are associated with the formation of quasi-bound-states. Our results can be reduced to the limiting case of a delta-profile oscillating potential when both a much less than lambda and V(0)a much less than 1 are satisfied. The assumed form of the time-modulated potential is expected to be realized in a gate-induced potential configuration.en_US
dc.language.isoen_USen_US
dc.titleQuantum transport in the presence of a finite-range time-modulated potentialen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.53.4838en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume53en_US
dc.citation.issue8en_US
dc.citation.spage4838en_US
dc.citation.epage4844en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1996TZ17700085en_US
dc.citation.woscount35en_US
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