標題: Germanium nanowire/conjugated semiconductor nanocomposite field effect transistors
作者: Lin, Sheng-Yu
Chan, Chih-Yu
Tsai, Chih-Wen
Hsieh, Gen-Wen
光電系統研究所
照明與能源光電研究所
Institute of Photonic System
Institute of Lighting and Energy Photonics
關鍵字: Field effect transistor;Germanium nanowire;Nanocomposite;Pentacene;Polythiophene
公開日期: 1-六月-2018
摘要: We demonstrate p-channel solution-processed nanocomposite field effect transistors based on a novel bilayer semiconductor of conjugated 6,13-bis(triisopropylsilylethinyl) pentacene (TIPS-PEN) or poly (3-octylthiophene-2,5-diyl) (P3OT) on an ordered network of germanium (Ge) nanowires. With an appropriate loading of Ge nanowires into the active channel, nanocomposite transistors show an enhancement of more than a factor of 10 over pristine devices. A hole carrier mobility as high as 0.248 cm(2) V(-1)s(-1) can be achieved based on the heterogeneous Ge/TIPS-PEN network. Moreover, the nanowire orientation relative to the source and drain contacts plays a crucial role in influencing the effective charge transport pathway and mobility anisotropy. It is expected that the nanocomposite FETs with oriented nanowire networks may open up a promising alternative route for the creation of next generation optoelectronic devices.
URI: http://dx.doi.org/10.1016/j.orgel.2018.03.029
http://hdl.handle.net/11536/144838
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2018.03.029
期刊: ORGANIC ELECTRONICS
Volume: 57
起始頁: 269
結束頁: 276
顯示於類別:期刊論文