完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiang, Tun-Yuan | en_US |
dc.contributor.author | Tsai, Chien-Huang | en_US |
dc.contributor.author | Huang, Ming-Chao | en_US |
dc.contributor.author | Wen, Hua-Chiang | en_US |
dc.contributor.author | Chou, Wu-Ching | en_US |
dc.date.accessioned | 2018-08-21T05:53:34Z | - |
dc.date.available | 2018-08-21T05:53:34Z | - |
dc.date.issued | 2018-05-01 | en_US |
dc.identifier.issn | 0142-2421 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1002/sia.6394 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144861 | - |
dc.description.abstract | The effects of thermal treatment of polycrystalline ZnO-TiO2 systems on their luminescence emission and phase properties were investigated using ex situ cathodoluminescence and back-scattering electron microscopy. The main features of the spectrum are a blue band at 2.75 eV for the phase of TiO and a complex visible band at 2.18 eV for the phase of ZnO, whose peak intensity depends on the annealing temperature. The spectrum intensity is dominated by the ZnO phase when annealing temperature was 720 degrees C, which is attributed to abnormal grain growth. Competition is observed between the broad band peaked at 2.18 eV and visible band peaked at 2.75 eV as the annealing temperature changed (820 degrees C-920 degrees C). The cathodoluminescence density is gradually governed by the TiO2 phase, and the emission in polychromatic and monochromatic imaging is stronger equally at 920 degrees C. The nucleation of the TiO2 and ZnO grains is present in the backscattering electron images as well. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | backscattering electron microscopy | en_US |
dc.subject | cathodoluminescence | en_US |
dc.subject | radio frequency magnetron cosputtering | en_US |
dc.title | Cathodoluminescence study of defects in thermal treatment of zinc titanate thin films deposited by a cosputtering process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/sia.6394 | en_US |
dc.identifier.journal | SURFACE AND INTERFACE ANALYSIS | en_US |
dc.citation.volume | 50 | en_US |
dc.citation.spage | 541 | en_US |
dc.citation.epage | 546 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000430307500002 | en_US |
顯示於類別: | 期刊論文 |