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dc.contributor.authorChiang, Tun-Yuanen_US
dc.contributor.authorTsai, Chien-Huangen_US
dc.contributor.authorHuang, Ming-Chaoen_US
dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.date.accessioned2018-08-21T05:53:34Z-
dc.date.available2018-08-21T05:53:34Z-
dc.date.issued2018-05-01en_US
dc.identifier.issn0142-2421en_US
dc.identifier.urihttp://dx.doi.org/10.1002/sia.6394en_US
dc.identifier.urihttp://hdl.handle.net/11536/144861-
dc.description.abstractThe effects of thermal treatment of polycrystalline ZnO-TiO2 systems on their luminescence emission and phase properties were investigated using ex situ cathodoluminescence and back-scattering electron microscopy. The main features of the spectrum are a blue band at 2.75 eV for the phase of TiO and a complex visible band at 2.18 eV for the phase of ZnO, whose peak intensity depends on the annealing temperature. The spectrum intensity is dominated by the ZnO phase when annealing temperature was 720 degrees C, which is attributed to abnormal grain growth. Competition is observed between the broad band peaked at 2.18 eV and visible band peaked at 2.75 eV as the annealing temperature changed (820 degrees C-920 degrees C). The cathodoluminescence density is gradually governed by the TiO2 phase, and the emission in polychromatic and monochromatic imaging is stronger equally at 920 degrees C. The nucleation of the TiO2 and ZnO grains is present in the backscattering electron images as well.en_US
dc.language.isoen_USen_US
dc.subjectbackscattering electron microscopyen_US
dc.subjectcathodoluminescenceen_US
dc.subjectradio frequency magnetron cosputteringen_US
dc.titleCathodoluminescence study of defects in thermal treatment of zinc titanate thin films deposited by a cosputtering processen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/sia.6394en_US
dc.identifier.journalSURFACE AND INTERFACE ANALYSISen_US
dc.citation.volume50en_US
dc.citation.spage541en_US
dc.citation.epage546en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000430307500002en_US
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