Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal-Oxide-Semiconductor Technology (vol 50, 04DL05, 2011)

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DC Field	Value	Language
dc.contributor.author	Chen, Hou-Yu	en_US
dc.contributor.author	Lin, Chia-Yi	en_US
dc.contributor.author	Chen, Min-Cheng	en_US
dc.contributor.author	Huang, Chien-Chao	en_US
dc.contributor.author	Chien, Chao-Hsin	en_US
dc.date.accessioned	2018-08-21T05:53:34Z	-
dc.date.available	2018-08-21T05:53:34Z	-
dc.date.issued	2018-05-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.7567/JJAP.57.059202	en_US
dc.identifier.uri	http://hdl.handle.net/11536/144869	-
dc.language.iso	en_US	en_US
dc.title	Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal-Oxide-Semiconductor Technology (vol 50, 04DL05, 2011)	en_US
dc.type	Article	en_US
dc.identifier.doi	10.7567/JJAP.57.059202	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	57	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000430511800001	en_US
Appears in Collections:	Articles