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dc.contributor.authorChen, Kuan-Yuen_US
dc.contributor.authorHsu, Ching-Chienen_US
dc.contributor.authorYu, Hsin-Chiehen_US
dc.contributor.authorPeng, Yu-Mingen_US
dc.contributor.authorYang, Chih-Chiangen_US
dc.contributor.authorSu, Yan-Kuinen_US
dc.date.accessioned2018-08-21T05:53:35Z-
dc.date.available2018-08-21T05:53:35Z-
dc.date.issued2018-05-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2018.2817637en_US
dc.identifier.urihttp://hdl.handle.net/11536/144894-
dc.description.abstractIn this paper, amorphous indium-gallium-oxide solar-blind metal-semiconductor-metal photodetectors were fabricated by using co-sputtering method. Three samples with different oxygen concentrations, namely, sample A without oxygen, sample B with 2% oxygen concentration, and sample C with 4% oxygen concentration, were investigated. The applied bias was 5 V during device characterization. The ultraviolet (UV)-to-visible rejection ratios were 39, 9.9 x 10(3), and 1.1 x 10(5) for samples A, B, and C, respectively. The dynamic responses of the decay times were 5.79/52.12 s, 1.96/30.49 s, and 0.02/0.75 s for samples A, B, and C, respectively. In summary, the 4% oxygen concentration sample exhibited excellent UV-to-visible rejection ratio and superior decay time.en_US
dc.language.isoen_USen_US
dc.subjectIndium-gallium-oxide (IGO)en_US
dc.subjectoxygen concentrationsen_US
dc.subjectsolar-blind photodetectorsen_US
dc.titleThe Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2018.2817637en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume65en_US
dc.citation.spage1817en_US
dc.citation.epage1822en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000430698900024en_US
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