標題: Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications
作者: Chou, Po-Chien
Hsieh, Ting-En
Cheng, Stone
del Alamo, Jesus A.
Chang, Edward Yi
機械工程學系
材料科學與工程學系
Department of Mechanical Engineering
Department of Materials Science and Engineering
關鍵字: GaN MIS-HEMT;reliability;trapping related degradation;failure mechanisms;hot electrons;dynamic R-ON
公開日期: 1-May-2018
摘要: This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal-insulator-semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface-and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.
URI: http://dx.doi.org/10.1088/1361-6641/aabb6a
http://hdl.handle.net/11536/144906
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aabb6a
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 33
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