完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYu, Hsueh-Lingen_US
dc.contributor.authorLi, Yih-Langen_US
dc.contributor.authorLiao, Tzu-Yien_US
dc.contributor.authorWang, Tianchenen_US
dc.contributor.authorTsai, Shu-Feien_US
dc.contributor.authorShi, Yiyuen_US
dc.date.accessioned2018-08-21T05:53:36Z-
dc.date.available2018-08-21T05:53:36Z-
dc.date.issued2018-05-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2017.2788437en_US
dc.identifier.urihttp://hdl.handle.net/11536/144912-
dc.description.abstractThe comparison of temperatures between measurement and simulation (i.e., temperature correlation) is commonly needed in many thermal studies. However, existing methods to measure temperature maps are either inaccurate or inconvenient due to various assumptions or measurement conditions needed. It still remains a missing piece in the literature how to accurately and flexibly measure temperature maps. Toward this, we propose a practical and feasible method for emissivity map measurement. Two reference plates are utilized to obtain an emissivity map, from which real emissivity value of each pixel of the infrared thermographer is obtained. According to the experimental results herein, the deviation of the emissivity measured using this method is on the order of 0.01, consistent with the minimum resolution of all currently available infrared thermographic instruments. With the emissivity map, highly accurate temperature map is then obtained. The method can be flexibly applied to various test samples whether the emissivity of the test sample changes with the wavelength or not. Experimental results on real ICs indicate that compared with commonly used infrared thermographer with uniform emissivity setting or black coating approaches, our method can obtain significantly better temperature correlation.en_US
dc.language.isoen_USen_US
dc.subjectCalibrationen_US
dc.subjectinfrared imagingen_US
dc.subjectinfrared sensorsen_US
dc.subjecttemperature measurementen_US
dc.titleFast and Accurate Emissivity and Absolute Temperature Maps Measurement for Integrated Circuitsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TVLSI.2017.2788437en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume26en_US
dc.citation.spage912en_US
dc.citation.epage923en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000430968600010en_US
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