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dc.contributor.authorLin, Dongen_US
dc.contributor.authorPi, Shubinen_US
dc.contributor.authorYang, Jianwenen_US
dc.contributor.authorTiwari, Nidhien_US
dc.contributor.authorRen, Jinhuaen_US
dc.contributor.authorZhang, Qunen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorShieh, Han-Pingen_US
dc.date.accessioned2018-08-21T05:53:37Z-
dc.date.available2018-08-21T05:53:37Z-
dc.date.issued2018-06-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1361-6641/aabd11en_US
dc.identifier.urihttp://hdl.handle.net/11536/144923-
dc.description.abstractIn this work, bottom-gate top-contact thin film transistors with double stacked amorphous IWO/ IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm(2)V(-1 )s(-1) and an on/off current ratio of 10(7).Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.en_US
dc.language.isoen_USen_US
dc.subjectIWO/IWO:Nen_US
dc.subjectnitrogen dopingen_US
dc.subjectbi-layeren_US
dc.subjectthin film transistoren_US
dc.titleEnhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1361-6641/aabd11en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume33en_US
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000431061800001en_US
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