完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Dong | en_US |
dc.contributor.author | Pi, Shubin | en_US |
dc.contributor.author | Yang, Jianwen | en_US |
dc.contributor.author | Tiwari, Nidhi | en_US |
dc.contributor.author | Ren, Jinhua | en_US |
dc.contributor.author | Zhang, Qun | en_US |
dc.contributor.author | Liu, Po-Tsun | en_US |
dc.contributor.author | Shieh, Han-Ping | en_US |
dc.date.accessioned | 2018-08-21T05:53:37Z | - |
dc.date.available | 2018-08-21T05:53:37Z | - |
dc.date.issued | 2018-06-01 | en_US |
dc.identifier.issn | 0268-1242 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/1361-6641/aabd11 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144923 | - |
dc.description.abstract | In this work, bottom-gate top-contact thin film transistors with double stacked amorphous IWO/ IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm(2)V(-1 )s(-1) and an on/off current ratio of 10(7).Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | IWO/IWO:N | en_US |
dc.subject | nitrogen doping | en_US |
dc.subject | bi-layer | en_US |
dc.subject | thin film transistor | en_US |
dc.title | Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/1361-6641/aabd11 | en_US |
dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 33 | en_US |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000431061800001 | en_US |
顯示於類別: | 期刊論文 |