Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

doi:10.1063/1.5020583

標題:	Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process
作者:	Chang, Che-Chia Liu, Po-Tsun Chien, Chen-Yu Fan, Yang-Shun 電子工程學系及電子研究所光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics
公開日期:	23-Apr-2018
摘要:	This study demonstrates the integration of a thin film transistor (TFT) and resistive random-access memory (RRAM) to form a one-transistor-one-resistor (1T1R) configuration. With the concept of the current conducting direction in RRAM and TFT, a triple-layer stack design of Pt/InGaZnO/Al2O3 is proposed for both the switching layer of RRAM and the channel layer of TFT. This proposal decreases the complexity of fabrication and the numbers of photomasks required. Also, the robust endurance and stable retention characteristics are exhibited by the 1T1R architecture for promising applications in memory-embedded flat panel displays. Published by AIP Publishing.
URI:	http://dx.doi.org/10.1063/1.5020583 http://hdl.handle.net/11536/144924
ISSN:	0003-6951
DOI:	10.1063/1.5020583
期刊:	APPLIED PHYSICS LETTERS
Volume:	112
Appears in Collections:	Articles