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dc.contributor.authorSantiago, Svette Reina Merdenen_US
dc.contributor.authorCaigas, Septem P.en_US
dc.contributor.authorLin, Tzu-Nengen_US
dc.contributor.authorYuan, Chi-Tsuen_US
dc.contributor.authorShen, Ji-Linen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2018-08-21T05:53:38Z-
dc.date.available2018-08-21T05:53:38Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c8ra90034een_US
dc.identifier.urihttp://hdl.handle.net/11536/144962-
dc.language.isoen_USen_US
dc.titleTunnel injection from WS2 quantum dots to InGaN/GaN quantum wells (vol 8, pg 15399, 2018)en_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c8ra90034een_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume8en_US
dc.citation.spage16419en_US
dc.citation.epage16419en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000431814500003en_US
Appears in Collections:Articles