標題: | The dynamics of thermal annealing in arsenic-ion-implanted GaAs |
作者: | Chen, WC Lin, GR Chang, CS 交大名義發表 光電工程學系 National Chiao Tung University Department of Photonics |
關鍵字: | arsenic-ion-implanted;GaAs;deep level transient spectroscopy;temperature-dependent resistance;transmission electron microscopy |
公開日期: | 15-二月-1996 |
摘要: | The effect of thermal annealing on the surfaces of arsenic-ion-implanted GaAs has been investigated by transmission electron microscopy, deep level transient spectroscopy and temperature-dependent resistance measurements. For the annealed films of arsenic-ion-implanted GaAs arsenic precipitates and a band of deep-level defects with the activation energy of around 0.6 eV near the surface are observed. The mean size and concentration of As precipitates in samples implanted at a dosage of 10(16) cm(-2) are about 2-3 nm and 7 x 10(16) cm(-3), respectively. The cross section of the deep level defects near the surface is calculated to be 7 x 10(-14) cm(2). The carrier-transport mechanisms of both as-implanted GaAs and post-annealed GaAs are shown dominantly to be hopping type conduction and active type conduction, respectively. |
URI: | http://dx.doi.org/10.1143/JJAP.35.L192 http://hdl.handle.net/11536/1450 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.35.L192 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 35 |
Issue: | 2B |
起始頁: | L192 |
結束頁: | L194 |
顯示於類別: | 期刊論文 |