標題: | Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs |
作者: | Lin, GR Chen, WC Chang, CS Chao, SC Wu, KH Hsu, TM Lee, WC Pan, CL 電子物理學系 光電工程學系 Department of Electrophysics Department of Photonics |
關鍵字: | arsenic-ion-implanted GaAs;photoconductive switch;ultrafast optoelectronics |
公開日期: | 1-九月-1998 |
摘要: | Structural, electrical, and ultrafast optical properties of furnace-annealed arsenic-ion-implanted GaAs (GaAs:As+) has been investigated for its applications in ultrafast optoelectronics, From these studies, we determine that GaAs substrates implanted with 200-keV arsenic ions at 10(16) ions/cm(2) and furnace-annealed at 500 degrees C-600 degrees C would have recovered its crystallinity, be highly resistive, and exhibit picosecond photo-excited carrier lifetimes. The duration of the electrical pulses generated by photoconductive switches (PCS's) fabricated on the optimized material was approximate to 4 ps, The risetime (10%-90%) and 1/e falltime were, respectively, approximate to 2 and 3 ps, These results were measurement-system limited, We estimated the actual response to be approximate to 2 ps, consistent with a photo-excited carrier lifetime of approximate to 1.8 ps. The peak responsivity was greater than or equal to 4x10(-3) A/W. The dark current for the GaAs:As+ PCS biased at 40 V was as low as 5 nA. The break down field was higher than 150 kV/cm, These characteristics are comparable to those of state-of-the-art photoconductors such as LT-GaAs. |
URI: | http://dx.doi.org/10.1109/3.709591 http://hdl.handle.net/11536/32437 |
ISSN: | 0018-9197 |
DOI: | 10.1109/3.709591 |
期刊: | IEEE JOURNAL OF QUANTUM ELECTRONICS |
Volume: | 34 |
Issue: | 9 |
起始頁: | 1740 |
結束頁: | 1748 |
顯示於類別: | 期刊論文 |