| Title: | Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications |
| Authors: | Pan, CL 光電工程學系 Department of Photonics |
| Keywords: | arsenic-ion-implanted GaAs;multiple dosage;photoconductive switch;picosecond;millimeter wave |
| Issue Date: | 1999 |
| Abstract: | GaAs bombarded with; arsenic ions at multiple dosages with various implantation energies were used to fabricate ultrafast photoconductive switches with picosecond response and bandwidth exceeding 500 MHz. |
| URI: | http://hdl.handle.net/11536/19434 |
| ISBN: | 0-7803-5807-4 |
| Journal: | 1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS |
| Begin Page: | 367 |
| End Page: | 368 |
| Appears in Collections: | Conferences Paper |
- Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors / Lin, GR;Pan, CL
- Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications / Pan, CL;Lin, GR
- THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas / Liu, TA;Tani, M;Pan, CL
- Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs / Lin, GR;Chen, WC;Chang, CS;Chao, SC;Wu, KH
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