Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications

標題:	Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications
作者:	Pan, CL 光電工程學系 Department of Photonics
關鍵字:	arsenic-ion-implanted GaAs;multiple dosage;photoconductive switch;picosecond;millimeter wave
公開日期:	1999
摘要:	GaAs bombarded with; arsenic ions at multiple dosages with various implantation energies were used to fabricate ultrafast photoconductive switches with picosecond response and bandwidth exceeding 500 MHz.
URI:	http://hdl.handle.net/11536/19434
ISBN:	0-7803-5807-4
期刊:	1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS
起始頁:	367
結束頁:	368
顯示於類別：	會議論文