標題: Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization
作者: Li, Yi-Shao
Wu, Chun-Yi
Chou, Chia-Hsin
Liao, Chan-Yu
Chuang, Kai-Chi
Luo, Jun-Dao
Li, Wei-Shuo
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-2018
摘要: A tetraethyl-orthosilicate (TEOS) capping oxide was deposited by low-pressure chemical vapor deposition (LPCVD) on a 200-nm-thick amorphous Si (a-Si) film as a heat reservoir to improve the crystallinity and surface roughness of polycrystalline silicon (poly-Si) formed by continuous-wave laser crystallization (CLC). The effects of four thicknesses of the capping oxide layer to satisfy an antireflection condition, namely, 90, 270, 450, and 630 nm, were investigated. The largest poly-Si grain size of 2.5 x 20 mu m(2) could be achieved using a capping oxide layer with an optimal thickness of 450 nm. Moreover, poly-Si nanorod (NR) thin-film transistors (TFTs) fabricated using the aforementioned technique exhibited a superior electron field-effect mobility of 1093.3 cm(2) V-1 s(-1) and an on/off current ratio of 2.53 x 10(9). (c) 2018 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.57.06KB06
http://hdl.handle.net/11536/145055
ISSN: 0021-4922
DOI: 10.7567/JJAP.57.06KB06
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 57
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