標題: | Impact of AlOx layer on resistive switching characteristics and device-to-device uniformity of bilayered HfOx-based resistive random access memory devices |
作者: | Chuang, Kai-Chi Chung, Hao-Tung Chu, Chi-Yan Luo, Jun-Dao Li, Wei-Shuo Li, Yi-Shao Cheng, Huang-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-六月-2018 |
摘要: | An AlOx layer was deposited on HfOx, and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlOx (1 nm)/HfOx (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V-Forming) of 2.08 V, set voltage (V-Set) of 1.96V, and reset voltage (V-Reset) of -1.02V, than the device with TiN/Ti/HfOx (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlOx layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade. (c) 2018 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/JJAP.57.06KC01 http://hdl.handle.net/11536/145056 |
ISSN: | 0021-4922 |
DOI: | 10.7567/JJAP.57.06KC01 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 57 |
顯示於類別: | 期刊論文 |