完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWu, Ping-Chunen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2018-08-21T05:53:47Z-
dc.date.available2018-08-21T05:53:47Z-
dc.date.issued2018-06-21en_US
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c8tc00959gen_US
dc.identifier.urihttp://hdl.handle.net/11536/145138-
dc.description.abstractSoft technology has been an emerging field since flexible and wearable electronics started flourishing. In this research field, oxides can play an important role due to their intriguing functionalities and superior thermal and chemical stabilities. To deliver high-quality thin films or structures based on oxides, heteroepitaxy is essential. However, the lack of a suitable approach remains an obstacle for flexible oxide heteroepitaxy. Recently, due to the advancement of growth facilities and characterization tools, various techniques have been employed to acquire flexible oxide heteroepitaxy. This review highlights the methods as well as direct and indirect approaches that are essential for developing oxide heteroepitaxy with mechanical flexibility. We also provide an overview, classifying the fields in terms of applications involving flexible oxide heteroepitaxy and the development of oxide-based approaches.en_US
dc.language.isoen_USen_US
dc.titleDevelopment of oxide heteroepitaxy for soft technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c8tc00959gen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Cen_US
dc.citation.volume6en_US
dc.citation.spage6102en_US
dc.citation.epage6117en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000435356600002en_US
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