標題: Van der Waals oxide heteroepitaxy
作者: Chu, Ying-Hao
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 5-十二月-2017
摘要: The research field of oxide heteroepitaxy suffers from the characteristics of misfit strain and substrate clamping, hampering the optimization of performance and the gain of fundamental understanding of oxide systems. Recently, there are demonstrations on functional oxides epitaxially fabricated on layered muscovite substrate. In these heterostructures, due to the weak interaction between substrate and film, they show the lattice of films close to bulk with excellent strictive properties, suggesting that these critical problems can be potentially solved by van der Waals oxide heteroepitaxy. In addition, by exploiting the transparent and flexible features of muscovite, such a heteroepitaxy can deliver new material solutions to transparent soft technology. In this paper, the history, development, and current status of van der Waals oxide heteroepitaxy are addressed and discussed. In the end, new research directions in terms of fundamental study and practical application are proposed to highlight the importance of this research field.
URI: http://dx.doi.org/10.1038/s41535-017-0069-9
http://hdl.handle.net/11536/153647
DOI: 10.1038/s41535-017-0069-9
期刊: NPJ QUANTUM MATERIALS
Volume: 2
起始頁: 0
結束頁: 0
顯示於類別:期刊論文