標題: | Effects of Electric Fields on the Switching Properties Improvements of RRAM Device With a Field-Enhanced Elevated-Film-Stack Structure |
作者: | Chuang, Kai-Chi Lin, Kuan-Yu Luo, Jun-Dao Li, Wei-Shuo Li, Yi-Shao Chu, Chi-Yan Cheng, Huang-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Resistive random access memory (RRAM);elevated-film-stack (EFS) structure;hafnium oxide;conductive filament (CF) |
公開日期: | 1-一月-2018 |
摘要: | In this paper, a resistive random access memory (RRAM) device using a field-enhanced elevated-film-stack (EFS) structure with a 15-nm-thick HfOx dielectric layer was fabricated and measured to achieve a forming voltage (V-Forming) of 2.04 V, set voltage (V-Set) of 0.95 V, and reset voltage (V-Reset) of -1.22 V, compared to the values of 2.73 V, 1.26 V, and -1.54 V for the planar one with 6-nm-thick HfOx, respectively. These resistive switching characteristics were effectively reduced, and the uniformity of these characteristics from device to device were considerably improved. The improvements of such an EFS-structured RRAM device were attributed to the high local electric fields at the two sharp corners of the EFS structure, which facilitated the formation of conductive filaments, and the distribution of the electric field was verified by technology computer-aided design simulations. |
URI: | http://dx.doi.org/10.1109/JEDS.2018.2832542 http://hdl.handle.net/11536/145143 |
ISSN: | 2168-6734 |
DOI: | 10.1109/JEDS.2018.2832542 |
期刊: | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY |
Volume: | 6 |
起始頁: | 622 |
結束頁: | 626 |
顯示於類別: | 期刊論文 |