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dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorHsueh, Hsu-Hungen_US
dc.contributor.authorOu, Sin-Liangen_US
dc.contributor.authorTsai, Chi-Tsungen_US
dc.contributor.authorTsai, Tsung-Yenen_US
dc.contributor.authorWuu, Dong-Singen_US
dc.date.accessioned2018-08-21T05:53:49Z-
dc.date.available2018-08-21T05:53:49Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn1862-6300en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssa.201600657en_US
dc.identifier.urihttp://hdl.handle.net/11536/145198-
dc.description.abstractIn this research, a nitride light-emitting diode (LED) fabricated on an electroplated Cu substrate can be removed from a GaN/sapphire (Eco-GaN) template by conducting the chemical lift-off (CLO) process using an AlN/strip-patterned-SiO2 intermediate sacrificial layer. The regrowth GaN epilayer deposited on AlN/patterned SiO2/Eco-GaN can achieve a high crystal quality via the epitaxial lateral overgrowth process. To etch the patterned SiO2 and AlN layers, the HF and 80 degrees C-KOH solutions were used, respectively. Due to the use of low-temperature KOH solution, the GaN epilayer would suffer less damage during the CLO process, improving the reuse feasibility for the Eco-GaN template. Moreover, when the etching treatment was used for the AlN layer, a highly lateral etching rate of 0.5mmh(-1) was achieved. Compared to the conventional LED, the vertical-type LED/Cu substrate had a higher output power of 212mW (at 350mA). Based on our estimation, the output power of LED prepared on Cu substrate had an 86% improvement in comparison to that of conventional LED. Obviously, the good optoelectronic performance of the LED/Cu device can be obtained after performing the CLO process. Furthermore, the separated Eco-GaN template has high potential for reuse applications, indicating that this technique is helpful to the cost-effective LED fabrication.en_US
dc.language.isoen_USen_US
dc.subjectchemical lift-offen_US
dc.subjectEco-GaNen_US
dc.subjectlight-emitting diodeen_US
dc.subjectvertical-type LEDen_US
dc.titleChemical lift-off process for nitride LEDs from an Eco-GaN template using an AlN/strip-patterned-SiO2 sacrificial layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssa.201600657en_US
dc.identifier.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEen_US
dc.citation.volume214en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000397577000030en_US
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