完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Horng, Ray-Hua | en_US |
dc.contributor.author | Hsueh, Hsu-Hung | en_US |
dc.contributor.author | Ou, Sin-Liang | en_US |
dc.contributor.author | Tsai, Chi-Tsung | en_US |
dc.contributor.author | Tsai, Tsung-Yen | en_US |
dc.contributor.author | Wuu, Dong-Sing | en_US |
dc.date.accessioned | 2018-08-21T05:53:49Z | - |
dc.date.available | 2018-08-21T05:53:49Z | - |
dc.date.issued | 2017-03-01 | en_US |
dc.identifier.issn | 1862-6300 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1002/pssa.201600657 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145198 | - |
dc.description.abstract | In this research, a nitride light-emitting diode (LED) fabricated on an electroplated Cu substrate can be removed from a GaN/sapphire (Eco-GaN) template by conducting the chemical lift-off (CLO) process using an AlN/strip-patterned-SiO2 intermediate sacrificial layer. The regrowth GaN epilayer deposited on AlN/patterned SiO2/Eco-GaN can achieve a high crystal quality via the epitaxial lateral overgrowth process. To etch the patterned SiO2 and AlN layers, the HF and 80 degrees C-KOH solutions were used, respectively. Due to the use of low-temperature KOH solution, the GaN epilayer would suffer less damage during the CLO process, improving the reuse feasibility for the Eco-GaN template. Moreover, when the etching treatment was used for the AlN layer, a highly lateral etching rate of 0.5mmh(-1) was achieved. Compared to the conventional LED, the vertical-type LED/Cu substrate had a higher output power of 212mW (at 350mA). Based on our estimation, the output power of LED prepared on Cu substrate had an 86% improvement in comparison to that of conventional LED. Obviously, the good optoelectronic performance of the LED/Cu device can be obtained after performing the CLO process. Furthermore, the separated Eco-GaN template has high potential for reuse applications, indicating that this technique is helpful to the cost-effective LED fabrication. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | chemical lift-off | en_US |
dc.subject | Eco-GaN | en_US |
dc.subject | light-emitting diode | en_US |
dc.subject | vertical-type LED | en_US |
dc.title | Chemical lift-off process for nitride LEDs from an Eco-GaN template using an AlN/strip-patterned-SiO2 sacrificial layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/pssa.201600657 | en_US |
dc.identifier.journal | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | en_US |
dc.citation.volume | 214 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000397577000030 | en_US |
顯示於類別: | 期刊論文 |