標題: Bandgap engineering of Si1-xGex epitaxial tunnel layer for tunnel FETs
作者: Chen, Yi-Ju
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-2018
摘要: The effects of the Si-1-xGe(x) epitaxial tunnel layer (ETL) scheme and ETL thickness on the ON-state current (l(ON)) of Si-1_Ge-x(x) ETL tunnel field-effect transistors (TFETs) are thoroughly studied in this work. Compared with using pure Ge as the ETL, implementing Si1-xGex with linearly changing Ge content degrades l(ON) markedly, whereas using Si1-xGex with stepwise changing Ge content degrades l(ON) slightly. Although changing the ETL material from Ge to Si1-xGex leads to l(ON) reduction, for practical implementation, it is anticipated that a better subthreshold swing (SS) can be obtained by ETL crystal quality improvement. The best Si1-xGex ETL scheme for application in complementary Si1-xGex ETL TFETs is 4-nm-thick Si1-xGex with stepwise decreasing bandgap (E-g).( )It is believed that this structure is more promising for implementation. (C) 2018 The Japan Society of Applied Physics.
URI: http://dx.doi.org/10.7567/JJAP.57.084201
http://hdl.handle.net/11536/145257
ISSN: 0021-4922
DOI: 10.7567/JJAP.57.084201
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 57
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