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dc.contributor.authorHsiao, Yu-Chihen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorYang, Shih-Teen_US
dc.date.accessioned2018-08-21T05:53:53Z-
dc.date.available2018-08-21T05:53:53Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2017.2662000en_US
dc.identifier.urihttp://hdl.handle.net/11536/145289-
dc.description.abstractA 2.4-GHz Q-enhanced lumped ring filter with a narrow bandpass response and two stopband-rejection transmission zeros using 0.18-mu m SiGe BiCMOS technology is demonstrated in this letter. A transformer-based Q-enhanced technique is employed to boost the Q-factor of on-chip inductors for low passband insertion loss. The measured results show zero dB insertion loss, 120-MHz 3-dB bandwidth for the passband centered at 2.45 GHz and with two transmission zeros at 2.35 and 2.65 GHz, respectively. The noise figure is about 14.5 dB, IP1dB is about -15.2 dBm and IIP3 is about -4.5 dBm, respectively. The total current consumption is 9.9 mA at 1.8 V supply voltage.en_US
dc.language.isoen_USen_US
dc.subjectActive bandpass filteren_US
dc.subjectQ-enhanced inductoren_US
dc.subjectring filteren_US
dc.subjecttransmission zeroen_US
dc.title2.4-GHz Q-Enhanced Lumped Ring Filter With Two Transmission Zeros Using 0.18-mu m SiGe BiCMOS Processen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2017.2662000en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume27en_US
dc.citation.spage305en_US
dc.citation.epage307en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000397776700033en_US
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