標題: Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors
作者: Zhong, Chia-Wen
Lin, Horng-Chih
Tsai, Jung-Ruey
Liu, Kou-Chen
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2016
摘要: In this work, we study the impact of gate dielectrics on the characteristics of bottom-gated tin-oxide thin-film transistors annealed in an oxygen ambience at 300 degrees C for various periods. SiO2, HfO2, and Al2O3 are employed as the gate dielectric in the test devices. The results show that the devices will start exhibiting p-type conduction behavior as the annealing reaches a specific time period which is closely related to the underlying gate dielectric, and the device characteristics can be improved as the annealing proceeds further. Nonetheless, a prolonged annealing may cause degradation of the devices. High hole mobility (3.33 cm(2)V(-1)s(-1)), low threshold voltage (1.95 V), and excellent I-on/I-off ratio (similar to 10(4)) are achieved on SnO TFTs with a SiO2 gate dielectric after an annealing of 30 min. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.04EG02
http://hdl.handle.net/11536/145306
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.04EG02
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
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