Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate

doi:10.7567/JJAP.55.04EH03

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DC Field	Value	Language
dc.contributor.author	Chang, Chiao	en_US
dc.contributor.author	Li, Hui	en_US
dc.contributor.author	Huang, Ssu-Hsuan	en_US
dc.contributor.author	Lin, Li-Chien	en_US
dc.contributor.author	Cheng, Hung-Hsiang	en_US
dc.date.accessioned	2018-08-21T05:53:54Z	-
dc.date.available	2018-08-21T05:53:54Z	-
dc.date.issued	2016-04-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.7567/JJAP.55.04EH03	en_US
dc.identifier.uri	http://hdl.handle.net/11536/145328	-
dc.description.abstract	The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13A/cm(2). We obtained no-phonon-and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni's empirical expression with alpha = 4.884 x 10(-4) eV/K and beta = 130 K. (C) 2016 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.7567/JJAP.55.04EH03	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	55	en_US
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.identifier.wosnumber	WOS:000373929400092	en_US
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