標題: | Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes |
作者: | Lin, CY Chin, A Hou, YT Li, MF McAlister, SP Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Al2O3;electroluminescence;light;light-emitting device (LED);SiGe |
公開日期: | 1-一月-2004 |
摘要: | We have fabricated Sn:In2O3 (ITO)-Al2O3 dielectric on Si1-xGex-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 mum, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency. |
URI: | http://dx.doi.org/10.1109/LPT.2003.818922 http://hdl.handle.net/11536/27237 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2003.818922 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 16 |
Issue: | 1 |
起始頁: | 36 |
結束頁: | 38 |
顯示於類別: | 期刊論文 |