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dc.contributor.authorHuy Binh Doen_US
dc.contributor.authorQuang Ho Lucen_US
dc.contributor.authorMinh Thien Huu Haen_US
dc.contributor.authorSa Hoang Huynhen_US
dc.contributor.authorTuan Anh Nguyenen_US
dc.contributor.authorHu, Chenmingen_US
dc.contributor.authorLin, Yueh Chinen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2018-08-21T05:53:59Z-
dc.date.available2018-08-21T05:53:59Z-
dc.date.issued2017-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2017.2688389en_US
dc.identifier.urihttp://hdl.handle.net/11536/145445-
dc.description.abstractUse of the Mo/Ti/AlN/HfO2 metal/dielectric stack to increase the permittivity of HfO2 for low power consumption InGaAs-based MOSFET is investigated in this letter. The dielectric constant of HfO2 was found to increase by 47%, from 17 to 25, after Ti doping without affecting the interface trap density around the mid-gap of the MOSCAPs. A strong inversion behavior with low leakage current for the MOSCAP was also observed. The gate voltage needed to tune the Fermi level of InGaAs channel was found to be smaller for the Ti-doped HfO2 sample as compared with the sample with un-doped HfO2. The increase of the dielectric constant of HfO2 after Ti doping combined with the use of Ti gate metal, which has the work function level near the conduction band edge of InGaAs, makes the proposed Mo/Ti/HfO2 (Ti) stackideal for future lowpower consumption InGaAs-based NMOS applications.en_US
dc.language.isoen_USen_US
dc.subjectHigh mobility III-V semiconductoren_US
dc.subjectTi doped HfO2en_US
dc.subjectinterface trap densityen_US
dc.subjectmetal/HfO2 interfacial passivationen_US
dc.subjectMo/Ti gate stacken_US
dc.titleInvestigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2017.2688389en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume38en_US
dc.citation.spage552en_US
dc.citation.epage555en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000400413200005en_US
Appears in Collections:Articles