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dc.contributor.authorShen, Yi-Siangen_US
dc.contributor.authorWang, Wei-Kaien_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.date.accessioned2019-04-03T06:44:26Z-
dc.date.available2019-04-03T06:44:26Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn2168-6734en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2017.2653419en_US
dc.identifier.urihttp://hdl.handle.net/11536/145451-
dc.description.abstractZinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < -4.43 V, high off-state breakdown voltage of 378 V, high I-ON/I-OFF ratio of 10(6), and low gate leakage current.en_US
dc.language.isoen_USen_US
dc.subjectZinc gallateen_US
dc.subjectmetal-oxide-semiconductor field-effect transistors (MOSFETs)en_US
dc.subjectchannel pinch-offen_US
dc.titleCharacterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JEDS.2017.2653419en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.citation.volume5en_US
dc.citation.issue2en_US
dc.citation.spage112en_US
dc.citation.epage116en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000400467500003en_US
dc.citation.woscount7en_US
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