Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

doi:10.1109/JEDS.2017.2653419

Full metadata record

DC Field	Value	Language
dc.contributor.author	Shen, Yi-Siang	en_US
dc.contributor.author	Wang, Wei-Kai	en_US
dc.contributor.author	Horng, Ray-Hua	en_US
dc.date.accessioned	2019-04-03T06:44:26Z	-
dc.date.available	2019-04-03T06:44:26Z	-
dc.date.issued	2017-03-01	en_US
dc.identifier.issn	2168-6734	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/JEDS.2017.2653419	en_US
dc.identifier.uri	http://hdl.handle.net/11536/145451	-
dc.description.abstract	Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < -4.43 V, high off-state breakdown voltage of 378 V, high I-ON/I-OFF ratio of 10(6), and low gate leakage current.	en_US
dc.language.iso	en_US	en_US
dc.subject	Zinc gallate	en_US
dc.subject	metal-oxide-semiconductor field-effect transistors (MOSFETs)	en_US
dc.subject	channel pinch-off	en_US
dc.title	Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/JEDS.2017.2653419	en_US
dc.identifier.journal	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY	en_US
dc.citation.volume	5	en_US
dc.citation.issue	2	en_US
dc.citation.spage	112	en_US
dc.citation.epage	116	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000400467500003	en_US
dc.citation.woscount	7	en_US
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