完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCheng, Chuan-Anen_US
dc.contributor.authorHuang, Yu-Hsiangen_US
dc.contributor.authorLin, Chien-Hungen_US
dc.contributor.authorLee, Chia-Linen_US
dc.contributor.authorYang, Shan-Chunen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2019-04-03T06:44:28Z-
dc.date.available2019-04-03T06:44:28Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn2168-6734en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2017.2661479en_US
dc.identifier.urihttp://hdl.handle.net/11536/145454-
dc.description.abstractA reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 degrees C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.en_US
dc.language.isoen_USen_US
dc.subjectThree-dimensional integrationen_US
dc.subjecttemporary bondingen_US
dc.subjectlaser releaseen_US
dc.titleFeasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Schemeen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JEDS.2017.2661479en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.citation.volume5en_US
dc.citation.issue2en_US
dc.citation.spage136en_US
dc.citation.epage140en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000400467500008en_US
dc.citation.woscount0en_US
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