標題: | High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films |
作者: | Liao, Chan-Yu Huang, Ching-Yu Huang, Ming-Hui Huang, Wen-Hsien Shen, Chang-Hong Shieh, Jia-Min Cheng, Huang-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-六月-2017 |
摘要: | High-performance polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) fabricated with lightly doped Ge thin films by excimer laser crystallization (ELC) and counter doping (CD) have been demonstrated. High-quality n-type Ge thin films with a grain size as large as 1 mu m were fabricated by ELC in the super lateral-growth regime and CD at a dose of 1 x 10(13) cm(-2) or higher. Consequently, a superior field-effect mobility of 271cm(2)V(-1)s(-1) and a high on/off current ratio of 2.7 x 10(3) have been obtained for p-channel Ge TFTs with the channel width and length of both 0.5 mu m fabricated by ELC at 300mJ/cm(2) and CD at a dose of 1 x 10(13)cm(-2). The effects of ELC conditions and CD dose on the electrical characteristics of p-channel Ge TFTs were also investigated. (C) 2017 The Japan Society of Applied Physics. |
URI: | http://dx.doi.org/10.7567/JJAP.56.06GF08 http://hdl.handle.net/11536/145488 |
ISSN: | 0021-4922 |
DOI: | 10.7567/JJAP.56.06GF08 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 56 |
Issue: | 1 |
顯示於類別: | 期刊論文 |