完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tzou, An-Jye | en_US |
dc.contributor.author | Hsieh, Dan-Hua | en_US |
dc.contributor.author | Chen, Szu-Hung | en_US |
dc.contributor.author | Liao, Yu-Kuang | en_US |
dc.contributor.author | Li, Zhen-Yu | en_US |
dc.contributor.author | Chang, Chun-Yen | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.date.accessioned | 2019-04-03T06:40:20Z | - |
dc.date.available | 2019-04-03T06:40:20Z | - |
dc.date.issued | 2016-06-01 | en_US |
dc.identifier.issn | 2079-9292 | en_US |
dc.identifier.uri | http://dx.doi.org/10.3390/electronics5020028 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145528 | - |
dc.description.abstract | This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed I-D under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GaN | en_US |
dc.subject | high electron mobility transistor (HEMT) | en_US |
dc.subject | current collapse | en_US |
dc.title | An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3390/electronics5020028 | en_US |
dc.identifier.journal | ELECTRONICS | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 光電工程研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of EO Enginerring | en_US |
dc.identifier.wosnumber | WOS:000380002600015 | en_US |
dc.citation.woscount | 5 | en_US |
顯示於類別: | 期刊論文 |