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dc.contributor.authorGeorge, T.en_US
dc.contributor.authorLi, P. W.en_US
dc.contributor.authorChen, K. H.en_US
dc.contributor.authorPeng, K. P.en_US
dc.contributor.authorLai, W. T.en_US
dc.date.accessioned2018-08-21T05:54:03Z-
dc.date.available2018-08-21T05:54:03Z-
dc.date.issued2017-03-15en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1361-6463/aa59aben_US
dc.identifier.urihttp://hdl.handle.net/11536/145534-
dc.description.abstractSince the inception of the first transistors in the 1940s, the immense body of work on the Group IV semiconductors, Si and Ge, has spearheaded spectacular advances in modern integrated-circuit (IC) technology that has enabled a vast landscape of device applications in logic, memory, and computing. Although initially Si supplanted Ge as the material of choice for metal-oxide-semiconductor field-effect transistors, Ge-based devices are now breaking new ground. Widespread and innovative Ge-based applications exist in optoelectronics, communications, microelectro-mechanical systems, and energy harvesting/savings. On the fundamental, materials science front, while it is well known that Ge and Si are fully miscible in each other, the nature and extent of their attraction for each other has largely been unexplored. In this paper, we report a rather curious interplay between Ge and Si that occurs at high temperature (similar to 900 degrees C) and that can be best described as 'symbiotic'. Each element appears to facilitate reactions in the other which would otherwise not be possible. Oxygen intersititials also appear to play a major role in these reactions. Our experimental work has allowed us to classify four distinct regimes where these reactions occur. We describe these conditions and provide the necessary theoretical explanations for these results.en_US
dc.language.isoen_USen_US
dc.subjectgermaniumen_US
dc.subjectsiliconen_US
dc.subjectoxygenen_US
dc.subjectnanocrystalsen_US
dc.subjectsymbioticen_US
dc.title'Symbiotic' semiconductors: unusual and counter-intuitive Ge/Si/O interactionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1361-6463/aa59aben_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000401725100001en_US
Appears in Collections:Articles