標題: | The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures |
作者: | Liao, Po-Yung Chang, Ting-Chang Chen, Yu-Jia Su, Wan-Ching Chen, Bo-Wei Chen, Li-Hui Hsieh, Tien-Yu Yang, Chung-Yi Chang, Kuan-Chang Zhang, Sheng-Dong Huang, Yen-Yu Chang, Hsi-Ming Chiang, Shin-Chuan 電子物理學系 Department of Electrophysics |
公開日期: | 15-May-2017 |
摘要: | In this letter, the effects of hot carriers on amorphous In-Ga-Zn-O thin film transistors (TFTs) of different geometric structures were investigated. Three types of via-contact structure TFTs are used in this experiment, defined as source-drain large (SD large), source-drain normal (SD normal), and fork-shaped. After hot-carrier stress, the I-V curves of both SD normal and fork-shaped TFTs with U-shaped drains show a threshold voltage shift along with the parasitic transistor characteristic in the reverse-operation mode. Asymmetrical degradation is exhibited in an ISE-TCAD simulation of the electric field, which shows the distribution of hot electrons injected into the etch-stop layer below the redundant drain electrode. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.4983713 http://hdl.handle.net/11536/145571 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4983713 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 110 |
Appears in Collections: | Articles |