完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tiong, Teck-Yaw | en_US |
dc.contributor.author | Dee, Chang-Fu | en_US |
dc.contributor.author | Hamzah, Azrul Azlan | en_US |
dc.contributor.author | Goh, Boon Tong | en_US |
dc.contributor.author | Wong, Yuan-Yee | en_US |
dc.contributor.author | Ooi, Lia | en_US |
dc.contributor.author | Majlis, Burhanuddin Yeop | en_US |
dc.contributor.author | Salleh, Muhamad Mat | en_US |
dc.contributor.author | Ahmad, Ishaq | en_US |
dc.date.accessioned | 2018-08-21T05:54:05Z | - |
dc.date.available | 2018-08-21T05:54:05Z | - |
dc.date.issued | 2017-06-15 | en_US |
dc.identifier.issn | 0924-4247 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.sna.2017.04.022 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145574 | - |
dc.description.abstract | One-dimensional zinc oxide nanowires (ZnO NWs) have been reported to be suitable for UV sensing, but their applications are limited due to restricted surface area which restrains the performance especially in term of response and recovery. In this paper, we fabricate a UV sensor using multi-parallel aligned ZnO NWs based FET in order to overcome the mentioned drawbacks. The sensing characteristics of multi parallel aligned ZnO NWs based FET toward 0.44 mW/cm(2) UV illumination has been examined under depletion and enhancement modes, at ambient conditions. The fabricated UV sensor was found to possess the ability to differentiate UV with different intensity, improved sensitivity (in depletion mode), short response and recovery time (< 1 s), and with high stability. Our paper reports a simple and effective approach for UV sensor fabrication with high responsivity, sensitivity and reproducibility. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ZnO | en_US |
dc.subject | FET | en_US |
dc.subject | Electrodeposition | en_US |
dc.subject | Dielectrophoresis | en_US |
dc.subject | Interdigitated electrodes | en_US |
dc.subject | Ultraviolet sensor | en_US |
dc.title | A rapid responding ultraviolet sensor based on multi-parallel aligned ZnO nanowires field effect transistor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.sna.2017.04.022 | en_US |
dc.identifier.journal | SENSORS AND ACTUATORS A-PHYSICAL | en_US |
dc.citation.volume | 260 | en_US |
dc.citation.spage | 139 | en_US |
dc.citation.epage | 145 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000402358200018 | en_US |
顯示於類別: | 期刊論文 |