標題: | Characterization of BaPbO3 and Ba(Pb1-xBix)O-3 thin films |
作者: | Sun, CL Wang, HW Chang, MC Lin, MS Chen, SY 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | barium metaplumbate;metal-organic deposition;thin films;resistivity |
公開日期: | 17-Feb-2002 |
摘要: | BaPbO3 and Ba(Pb1-xBix)O-3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 degreesC and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Omega sq(-1) (resistivity approximate to 1.07 x 10(-4) Omega cm) could be obtained at 750 degreesC. However, an annealing temperature over 800 degreesC causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O-3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Omega sq(-1) at x = 0.3. (C) 2002 Elsevier Science B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0254-0584(02)00377-2 http://hdl.handle.net/11536/145583 |
ISSN: | 0254-0584 |
DOI: | 10.1016/S0254-0584(02)00377-2 |
期刊: | MATERIALS CHEMISTRY AND PHYSICS |
Volume: | 78 |
起始頁: | 507 |
結束頁: | 511 |
Appears in Collections: | Articles |