標題: | High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes |
作者: | Huang, Chia-Yen Wu, Pei-Yu Chang, Kai-Shiang Lin, Yun-Hsiang Peng, Wei-Chih Chang, Yem-Yeu Li, Jui-Ping Yen, Hung-Wei Wu, YewChung Sermon Miyake, Hideto Kuo, Hao-Chung 材料科學與工程學系 光電工程學系 光電工程研究所 Department of Materials Science and Engineering Department of Photonics Institute of EO Enginerring |
公開日期: | 1-May-2017 |
摘要: | A high-quality and highly-transparent AlN template was prepared by regrowth on a sputter-deposited AlN buffer layer. The buffer layer was thermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition (MOCVD). The peakwidth of (002) and (102) plane x-ray rocking curve was 104 arcsec and 290 arcsec, respectively, indicating a threading dislocation density <5.0 x 10(8) cm(-2). Dislocations were reduced via grain growth and morphological evolution. The absence of carbon impurity source in sputter deposition also resulted in an improved transparency. According to transmission and reflection measurements, the absorption rate of lambda=280 nm emission propagating through the template was less than 6%. (C) 2017 Author(s). |
URI: | http://dx.doi.org/10.1063/1.4983708 http://hdl.handle.net/11536/145600 |
ISSN: | 2158-3226 |
DOI: | 10.1063/1.4983708 |
期刊: | AIP ADVANCES |
Volume: | 7 |
Issue: | 5 |
起始頁: | 0 |
結束頁: | 0 |
Appears in Collections: | Articles |
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