標題: Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
作者: Lu, Ying-Hsin
Chang, Ting-Chang
Liao, Jih-Chien
Chen, Li-Hui
Lin, Yu-Shan
Chen, Ching-En
Liu, Kuan-Ju
Liu, Xi-Wen
Lin, Chien-Yu
Lien, Chen-Hsin
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Yen, Wei-Ting
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hole trapping;fast IV sweep;process-related pre-existing defects;negative bias temperature instability (NBTI)
公開日期: 1-六月-2017
摘要: This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO2 layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO2 layer.
URI: http://dx.doi.org/10.1109/TDMR.2017.2672740
http://hdl.handle.net/11536/145626
ISSN: 1530-4388
DOI: 10.1109/TDMR.2017.2672740
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 17
起始頁: 475
結束頁: 478
顯示於類別:期刊論文