標題: | Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs |
作者: | Lu, Ying-Hsin Chang, Ting-Chang Liao, Jih-Chien Chen, Li-Hui Lin, Yu-Shan Chen, Ching-En Liu, Kuan-Ju Liu, Xi-Wen Lin, Chien-Yu Lien, Chen-Hsin Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Yen, Wei-Ting 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Hole trapping;fast IV sweep;process-related pre-existing defects;negative bias temperature instability (NBTI) |
公開日期: | 1-六月-2017 |
摘要: | This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO2 layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO2 layer. |
URI: | http://dx.doi.org/10.1109/TDMR.2017.2672740 http://hdl.handle.net/11536/145626 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2017.2672740 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 17 |
起始頁: | 475 |
結束頁: | 478 |
顯示於類別: | 期刊論文 |