完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tan, Chao-Yuan | en_US |
dc.contributor.author | Tseng, Pin-Yen | en_US |
dc.contributor.author | Hsieh, Gen-Wen | en_US |
dc.date.accessioned | 2018-08-21T05:54:11Z | - |
dc.date.available | 2018-08-21T05:54:11Z | - |
dc.date.issued | 2017-07-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2017.2700047 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145638 | - |
dc.description.abstract | We report a new n-type single-crystalline microribbon based on a chlorophenyl-substituted perylene tetracarboxylic diimide derivative via solution-phase self-assembly. Electronic transport, environmental stability, and photoresponse properties of these microribbons are studied using field-effect transistors. Transistors based on a network of the as-prepared microribbons have moderate electron mobilities and ON/OFF current ratios on the order of 10(-3) cm(2)/V.s and 10(3)-10(4), respectively. The lifetime test of microribbon devices under various humidity conditions is found to be very sustainable over 100 days. Moreover, illuminating these microribbons could profoundly induce photocurrents in the visible light range, presenting good responsivity of 9.5 A/W and a high external quantum efficiency up to 2000% under 1.9 mW/cm(2). In addition, these microribbon devices are processed from solution-phase at temperatures below 100 degrees C, making the technology a viable candidate for low-cost and plastic-based organic optoelectronic applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Microribbon | en_US |
dc.subject | n-type organic field-effect transistor (OFET) | en_US |
dc.subject | perylene diimide | en_US |
dc.subject | photoresponse | en_US |
dc.title | Electronic Transport and Light Response of Air-Stable n-Type Organic Chlorophenyl-Substituted Perylene Diimide Microribbons | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2017.2700047 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 64 | en_US |
dc.citation.spage | 2935 | en_US |
dc.citation.epage | 2941 | en_US |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 照明與能源光電研究所 | zh_TW |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
dc.identifier.wosnumber | WOS:000403452900024 | en_US |
顯示於類別: | 期刊論文 |