完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liao, Po-Yung | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Su, Wan-Ching | en_US |
dc.contributor.author | Chen, Bo-Wei | en_US |
dc.contributor.author | Chen, Li-Hui | en_US |
dc.contributor.author | Hsieh, Tien-Yu | en_US |
dc.contributor.author | Yang, Chung-Yi | en_US |
dc.contributor.author | Chang, Kuan-Chang | en_US |
dc.contributor.author | Zhang, Sheng-Dong | en_US |
dc.contributor.author | Huang, Yen-Yu | en_US |
dc.contributor.author | Chang, Hsi-Ming | en_US |
dc.contributor.author | Chiang, Shin-Chuan | en_US |
dc.date.accessioned | 2018-08-21T05:54:16Z | - |
dc.date.available | 2018-08-21T05:54:16Z | - |
dc.date.issued | 2017-06-26 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4990964 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/145742 | - |
dc.description.abstract | This letter investigates repeated uniaxial mechanical stress-induced degradation behavior in flexible amorphous In-Ga-Zn-O thin-film transistors (TFTs) of different geometric structures. Two types of via-contact structure TFTs are investigated: symmetrical and UI structure (TFTs with Iand U-shaped asymmetric electrodes). After repeated mechanical stress, I-V curves for the symmetrical structure show a significant negative threshold voltage (VT) shift, due to mechanical stress-induced oxygen vacancy generation. However, degradation in the UI structure TFTs after stress is a negative VT shift along with the parasitic transistor characteristic in the forward-operation mode, with this hump not evident in the reverse-operation mode. This asymmetrical degradation is clarified by the mechanical strain simulation of the UI TFTs. Published by AIP Publishing. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4990964 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 110 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000404627700053 | en_US |
顯示於類別: | 期刊論文 |