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dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorSu, Wan-Chingen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorChen, Li-Huien_US
dc.contributor.authorHsieh, Tien-Yuen_US
dc.contributor.authorYang, Chung-Yien_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorZhang, Sheng-Dongen_US
dc.contributor.authorHuang, Yen-Yuen_US
dc.contributor.authorChang, Hsi-Mingen_US
dc.contributor.authorChiang, Shin-Chuanen_US
dc.date.accessioned2018-08-21T05:54:16Z-
dc.date.available2018-08-21T05:54:16Z-
dc.date.issued2017-06-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4990964en_US
dc.identifier.urihttp://hdl.handle.net/11536/145742-
dc.description.abstractThis letter investigates repeated uniaxial mechanical stress-induced degradation behavior in flexible amorphous In-Ga-Zn-O thin-film transistors (TFTs) of different geometric structures. Two types of via-contact structure TFTs are investigated: symmetrical and UI structure (TFTs with Iand U-shaped asymmetric electrodes). After repeated mechanical stress, I-V curves for the symmetrical structure show a significant negative threshold voltage (VT) shift, due to mechanical stress-induced oxygen vacancy generation. However, degradation in the UI structure TFTs after stress is a negative VT shift along with the parasitic transistor characteristic in the forward-operation mode, with this hump not evident in the reverse-operation mode. This asymmetrical degradation is clarified by the mechanical strain simulation of the UI TFTs. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleImpact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4990964en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume110en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000404627700053en_US
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