標題: RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interface
作者: Luong, Tien Tung
Lumbantoruan, Franky
Chen, Yen-Yu
Ho, Yen-Teng
Weng, You-Chen
Lin, Yueh-Chin
Chang, Shane
Chang, Edward-Yi
材料科學與工程學系
電機學院
光電工程學系
Department of Materials Science and Engineering
College of Electrical and Computer Engineering
Department of Photonics
關鍵字: AlN;buffer;coplanar waveguides;GaN;high-electron mobility;inversion layer;losses;silicon;transistors
公開日期: 1-Jul-2017
摘要: One of the epitaxial issues pertaining to the growth of AlGaN/GaN HEMTs on Si is the decrease of parasitic losses that can adversely impact the RF device performances. We characterized the microwave losses in coplanar waveguides (CPWs) on GaN-based high-electron-mobility-transistors (HEMTs) and their buffer layers on Silicon substrate, up to 40GHz. The RF losses depend not only on the crystalline quality but also on the residual tensile stress in AlN buffer, as well as its thickness. The mechanism of interfacial lossy channel induced by the piezoelectric field is discussed. Adopting a thin high-low-high temperature (HLH) AlN buffer can help to reduce the tensile stress leading to a reduction of RF losses. We suggest that a thinner p-type AlN and/or p-AlGaN-on-thin AlN near the interface can suppress the electron interfacial lossy channel, which helps the GaN-HEMT-on-HR Si to remain in a high frequency range and at high-temperature operation. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI: http://dx.doi.org/10.1002/pssa.201600944
http://hdl.handle.net/11536/145755
ISSN: 1862-6300
DOI: 10.1002/pssa.201600944
期刊: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume: 214
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