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dc.contributor.authorChiang, Yen Chihen_US
dc.contributor.authorLin, Bing Chengen_US
dc.contributor.authorChen, Kuo Juen_US
dc.contributor.authorLin, Chien Chungen_US
dc.contributor.authorLee, Po Tsungen_US
dc.contributor.authorKuo, Hao Chungen_US
dc.date.accessioned2019-04-03T06:37:17Z-
dc.date.available2019-04-03T06:37:17Z-
dc.date.issued2014-12-29en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-9-699en_US
dc.identifier.urihttp://hdl.handle.net/11536/145805-
dc.description.abstractFor the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 similar to 6 times compared to our reference.en_US
dc.language.isoen_USen_US
dc.subjectGallium nitrideen_US
dc.subjectLight-emitting diodeen_US
dc.subjectVertical injectionen_US
dc.subjectUltravioleten_US
dc.subjectCurrent blocking layeren_US
dc.subjectTextured surfaceen_US
dc.titleEnhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-9-699en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000209866100002en_US
dc.citation.woscount2en_US
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