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dc.contributor.authorWang, Zi-Haoen_US
dc.contributor.authorYu, Hsin-Chiehen_US
dc.contributor.authorYang, Chih-Chiangen_US
dc.contributor.authorYeh, Hsin-Tingen_US
dc.contributor.authorSu, Yan-Kuinen_US
dc.date.accessioned2018-08-21T05:54:20Z-
dc.date.available2018-08-21T05:54:20Z-
dc.date.issued2017-08-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2017.2706320en_US
dc.identifier.urihttp://hdl.handle.net/11536/145830-
dc.description.abstractIn this paper, we developed a simple hydrothermal method to synthesize vertically aligned ZnO:Al nanorods (NRs) to fabricate a UV photodetector (PD) on a seed layer/glass substrate. The photo-to-dark current ratio of the ZnO: Al NR PD was approximately 1.4 x 10(3) under 1-V bias and UV light irradiation (380 nm). The calculated responsivity of the fabricated PD was 181 A . W-1, and the UV-to-visible rejection ratio of the PD at 1-V applied bias was 1.51 x 10(3). In addition, flicker noise dominated the noise of the ZnO: Al NR PD. The noise-equivalent power and normalized detectivity of the ZnO:Al NR PD were 1.17 x 10(-11) W and 4.03 x 10(12) cm . Hz(0.5)W(-1), respectively.en_US
dc.language.isoen_USen_US
dc.subjectAluminumen_US
dc.subjecthydrothermalen_US
dc.subjectlow-frequency noiseen_US
dc.subjectphotodetector (PD)en_US
dc.subjectZnO nanorods (NRs)en_US
dc.titleLow-Frequency Noise Performance of Al-Doped ZnO Nanorod Photosensors by a Low-Temperature Hydrothermal Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2017.2706320en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume64en_US
dc.citation.spage3206en_US
dc.citation.epage3212en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000406268900024en_US
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