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dc.contributor.authorWang, C. H.en_US
dc.contributor.authorChang, S. P.en_US
dc.contributor.authorChang, W. T.en_US
dc.contributor.authorLi, J. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:20:30Z-
dc.date.available2014-12-08T15:20:30Z-
dc.date.issued2011en_US
dc.identifier.isbn978-0-81948-733-9en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/14592-
dc.identifier.urihttp://dx.doi.org/10.1117/12.892997en_US
dc.description.abstractA graded-composition electron blocking layer (GEBL) with aluminum composition increasing along [ 0001] direction was designed for c-plane GaN-based light-emitting diodes (LEDs). The simulation results demonstrated that such GEBL can effectively enhance the capability of hole transportation across the EBL as well as the electron confinement. Consequently, the LED with GEBL grown by metal-organic chemical vapor deposition exhibited better electrical characteristics, and much higher output power at high current density, as compared to conventional LED. Meanwhile, the efficiency droop was reduced from 34% in conventional LED to only 4% from the maximum value at low injection current to 200 A/cm(2).en_US
dc.language.isoen_USen_US
dc.subjectlight-emitting diodesen_US
dc.subjectefficiency droopen_US
dc.subjectelectron blocking layeren_US
dc.titleEfficiency droop improvement in GaN-based light-emitting diodes by graded-composition electron blocking layeren_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.892997en_US
dc.identifier.journalELEVENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTINGen_US
dc.citation.volume8123en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000296133000030-
Appears in Collections:Conferences Paper


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