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dc.contributor.authorKumar, Malkundi Puttaveerappa Vijayen_US
dc.contributor.authorHu, Chia-Yingen_US
dc.contributor.authorWalke, Amey Mahadeven_US
dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2018-08-21T05:54:26Z-
dc.date.available2018-08-21T05:54:26Z-
dc.date.issued2017-09-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2017.2728099en_US
dc.identifier.urihttp://hdl.handle.net/11536/145948-
dc.description.abstractThis paper investigates the impacts of typical semiconductor material properties-electron affinity, bandgap, and dielectric constant, on the electrical performance of a p-type core-shell heterojunction nanowire FET by numerical simulations. At the heterojunction, a valence band offset of 200 meV forms a sufficient energy barrier confining the holes in the quantum well, resulting in the optimal OFF-state current. A higher dielectric constant of the shell region is found to be able to decrease the leakage current of the device. The optimum conditions from the parameter analysis are demonstrated by a realistic and achievable material combination of Si/SiGe for the core-shell configuration. This paper provides physical insights into the materialwise impacts for designing the proposed transistor showing the reduced OFF-current and a better subthreshold swing for low-power applications.en_US
dc.language.isoen_USen_US
dc.subjectHeterostructure confinementen_US
dc.subjectquantum well (QW)en_US
dc.subjectshell doping profile (SDP)en_US
dc.titleImproving the Electrical Performance of a Quantum Well FET With a Shell Doping Profile by Heterojunction Optimizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2017.2728099en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume64en_US
dc.citation.spage3556en_US
dc.citation.epage3561en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000408118700005en_US
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